Interconnect and MOS transistor degradation at high current densities.

Details

Language :

English

ISBNs :

9780780352209

Database :

Complementary Index

Journal :

1999 IEEE International Reliability Physics Symposium Proceedings 37th Annual (Cat No99CH36296)

Publication Type :

Conference

Accession number :

92135634

Full Text :

https://doi.org/10.1109/RELPHY.1999.761588