Total dose behavior of partially depleted SOI dynamic threshold voltage MOS (DTMOS) for very low supply voltage applications (0.6-1 V).

MLA

Ferlet-Cavrois, V., et al. “Total Dose Behavior of Partially Depleted SOI Dynamic Threshold Voltage MOS (DTMOS) for Very Low Supply Voltage Applications (0.6-1 V).” 1999 Fifth European Conference on Radiation & Its Effects on Components & Systems RADECS 99 (Cat No99TH8471), Jan. 2000, pp. 308–14. EBSCOhost, https://doi.org/10.1109/RADECS.1999.858600.

APA

Ferlet-Cavrois, V., Paillet, P., Musseau, O., Leray, J. L., Faynot, O., Raynaud, C., & Pelloie, J. L. (2000). Total dose behavior of partially depleted SOI dynamic threshold voltage MOS (DTMOS) for very low supply voltage applications (0.6-1 V). 1999 Fifth European Conference on Radiation & Its Effects on Components & Systems RADECS 99 (Cat No99TH8471), 308–314. https://doi.org/10.1109/RADECS.1999.858600

Chicago

Ferlet-Cavrois, V., P. Paillet, O. Musseau, J.L. Leray, O. Faynot, C. Raynaud, and J.L. Pelloie. 2000. “Total Dose Behavior of Partially Depleted SOI Dynamic Threshold Voltage MOS (DTMOS) for Very Low Supply Voltage Applications (0.6-1 V).” 1999 Fifth European Conference on Radiation & Its Effects on Components & Systems RADECS 99 (Cat No99TH8471), January, 308–14. doi:10.1109/RADECS.1999.858600.