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The study of growth and the properties of C in SiGeC alloy on Si by rapid thermal chemical vapor deposition.
- Source :
- 1998 5th International Conference on Solid-State & Integrated Circuit Technology Proceedings (Cat No98EX105); 1998, p796-799, 4p
- Publication Year :
- 1998
Details
- Language :
- English
- ISBNs :
- 9780780343061
- Database :
- Complementary Index
- Journal :
- 1998 5th International Conference on Solid-State & Integrated Circuit Technology Proceedings (Cat No98EX105)
- Publication Type :
- Conference
- Accession number :
- 92123596
- Full Text :
- https://doi.org/10.1109/ICSICT.1998.786150