Back to Search Start Over

Utilizing substrate damage introduced by MERIE of single crystal silicon for selective CVD of oxide.

Authors :
Engelhardt, M.
Grassl, T.
Source :
1998 3rd International Symposium on Plasma Process-Induced Damage (Cat No98EX100); 1998, p92-95, 4p
Publication Year :
1998

Details

Language :
English
ISBNs :
9780965157728
Database :
Complementary Index
Journal :
1998 3rd International Symposium on Plasma Process-Induced Damage (Cat No98EX100)
Publication Type :
Conference
Accession number :
92123226
Full Text :
https://doi.org/10.1109/PPID.1998.725582