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Utilizing substrate damage introduced by MERIE of single crystal silicon for selective CVD of oxide.
- Source :
- 1998 3rd International Symposium on Plasma Process-Induced Damage (Cat No98EX100); 1998, p92-95, 4p
- Publication Year :
- 1998
Details
- Language :
- English
- ISBNs :
- 9780965157728
- Database :
- Complementary Index
- Journal :
- 1998 3rd International Symposium on Plasma Process-Induced Damage (Cat No98EX100)
- Publication Type :
- Conference
- Accession number :
- 92123226
- Full Text :
- https://doi.org/10.1109/PPID.1998.725582