High efficiency, low adjacent channel leakage 2-V operation GaAs power MESFET amplifier for 1.9-GHz digital cordless phone system.

Details

Language :

English

ISBNs :

9780780338142

Issue :

3

Database :

Complementary Index

Journal :

1997 IEEE MTT-S International Microwave Symposium Digest

Publication Type :

Conference

Accession number :

92120133

Full Text :

https://doi.org/10.1109/MWSYM.1997.596571