Characterization of High-k Gate Dielectric with Amorphous Nanostructure.

In the present study, Zr _xLa _1−xO _y amorphous nanostructures were prepared by the sol–gel method such that the Zr atomic fraction ( x) ranged from 0% to 70%. An analytical model is described for the dielectric constant ( k) of Zr _xLa _1−xO _y nanostructures in a metal–oxide–semiconductor (MOS) device. The structure and morphology of Zr _xLa _1−xO _y film was studied using x-ray diffraction, scanning electron microscopy, atomic force microscopy, and transmission electron microscopy. Elemental qualitative analysis was performed using energy-dispersive x-ray spectra and a map that confirmed the findings. Preliminary information on the influence of thermal annealing on the morphological control of Zr _xLa _1−xO _y amorphous nanostructures is presented. The dielectric constant of the crystalline Zr _0.5La _0.5O _y thin film is about 36. Electrical property characterization was performed using a metal–dielectric–semiconductor structure via capacitance–voltage and current density–voltage measurements. [ABSTRACT FROM AUTHOR]