Stress Topology within Silicon Single-Crystal Cantilever Beam.

Flexural elastic deformations of single-crystal silicon with microspectral Raman scattering are studied. The investigation results are given on nano-scaled sign-changing shifts of the main peak of the microspectral Raman scattering within the single-crystal silicon cantilever beam under influence of flexural stress. The maximum value of Raman shift characteristic of silicon peak equal to 518 cm^-1, when elasticity still remains, amounted to 8 cm^-1. The qualitative explanation of increase in strength of the cantilever beam due to its small thickness (2 μm) is provided, which is in accord with predictions of real-world physical parameters that were obtained in software environment SolidWorks with the module SimulationXpress. [ABSTRACT FROM AUTHOR]