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Impurity free vacancy disordering of self-assembled InGaAs quantum dots by using PECVD-grown SiO2 and SiN x capping films.
- Source :
- Physica Status Solidi (C); 2003, Vol. 0 Issue 4, p1185-1188, 4p
- Publication Year :
- 2003
Details
- Language :
- English
- ISSN :
- 18626351
- Volume :
- 0
- Issue :
- 4
- Database :
- Complementary Index
- Journal :
- Physica Status Solidi (C)
- Publication Type :
- Academic Journal
- Accession number :
- 91034506
- Full Text :
- https://doi.org/10.1002/pssc.200303035