Impurity free vacancy disordering of self-assembled InGaAs quantum dots by using PECVD-grown SiO2 and SiN x capping films.

Details

Language :

English

ISSN :

18626351

Volume :

0

Issue :

4

Database :

Complementary Index

Journal :

Physica Status Solidi (C)

Publication Type :

Academic Journal

Accession number :

91034506

Full Text :

https://doi.org/10.1002/pssc.200303035