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Molecular beam epitaxy of p-hexaphenyl on GaAs(111).

Authors :
Resel, R.
Erlacher, K.
Müller, B.
Thierry, A.
Lotz, B.
Kuhlmann, T.
Lischka, K.
Leising, G.
Source :
Surface & Interface Analysis: SIA; 2000, Vol. 30 Issue 1, p518-521, 4p
Publication Year :
2000

Details

Language :
English
ISSN :
01422421
Volume :
30
Issue :
1
Database :
Complementary Index
Journal :
Surface & Interface Analysis: SIA
Publication Type :
Academic Journal
Accession number :
90817793
Full Text :
https://doi.org/10.1002/1096-9918(200008)30:1<518::AID-SIA718>3.0.CO;2-Q