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Impurity band conduction effects in liquid phase epitaxial Te-doped GaP grown from tin solution.
- Source :
- Kristall & Technik; 1978, Vol. 13 Issue 4, p377-382, 6p
- Publication Year :
- 1978
Details
- Language :
- English
- ISSN :
- 00234753
- Volume :
- 13
- Issue :
- 4
- Database :
- Complementary Index
- Journal :
- Kristall & Technik
- Publication Type :
- Academic Journal
- Accession number :
- 90686547
- Full Text :
- https://doi.org/10.1002/crat.19780130407