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Wafer-Scale Flexible Surface Acoustic Wave Devices Based on an AlN/Si Structure.
- Source :
- Chinese Physics Letters; 2013, Vol. 30 Issue 7, p1-4, 4p
- Publication Year :
- 2013
-
Abstract
- The article focuses on use of wafer-scale flexible surface acoustic wave (SAW) devices which are based on Aluminum Nitride (AIN) / Silicon (Si) structure. The article mentions about growing interest in flexible electronics and the use of metal oxide semiconductors. The article also mentions about micrcoelectromechanical system (MEMS) and Complementary Metal oxide semiconductors (CMOS).
Details
- Language :
- English
- ISSN :
- 0256307X
- Volume :
- 30
- Issue :
- 7
- Database :
- Complementary Index
- Journal :
- Chinese Physics Letters
- Publication Type :
- Academic Journal
- Accession number :
- 90221314
- Full Text :
- https://doi.org/10.1088/0256-307X/30/7/077701