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Wafer-Scale Flexible Surface Acoustic Wave Devices Based on an AlN/Si Structure.

Authors :
ZHANG Cang-Hai
YANG Yi
ZHOU Chang-Jian
SHU Yi
TIAN He
WANG Zhe
XUE Qing-Tang
REN Tian-Ling
Source :
Chinese Physics Letters; 2013, Vol. 30 Issue 7, p1-4, 4p
Publication Year :
2013

Abstract

The article focuses on use of wafer-scale flexible surface acoustic wave (SAW) devices which are based on Aluminum Nitride (AIN) / Silicon (Si) structure. The article mentions about growing interest in flexible electronics and the use of metal oxide semiconductors. The article also mentions about micrcoelectromechanical system (MEMS) and Complementary Metal oxide semiconductors (CMOS).

Details

Language :
English
ISSN :
0256307X
Volume :
30
Issue :
7
Database :
Complementary Index
Journal :
Chinese Physics Letters
Publication Type :
Academic Journal
Accession number :
90221314
Full Text :
https://doi.org/10.1088/0256-307X/30/7/077701