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High-performance Si1−xGex channel on insulator trigate PFETs featuring an implant-free process and aggressively-scaled fin and gate dimensions.
- Source :
- 2013 Symposium on VLSI Technology; 2013, pT18-T19, 2p
- Publication Year :
- 2013
Details
- Language :
- English
- ISBNs :
- 9781467352260
- Database :
- Complementary Index
- Journal :
- 2013 Symposium on VLSI Technology
- Publication Type :
- Conference
- Accession number :
- 90162973