Record extrinsic transconductance (2.45 mS/µm at VDS = 0.5 V) InAs/In0.53Ga0.47As channel MOSFETs using MOCVD source-drain regrowth.

MLA

Lee, S., et al. “Record Extrinsic Transconductance (2.45 MS/Μm at VDS = 0.5 V) InAs/In0.53Ga0.47As Channel MOSFETs Using MOCVD Source-Drain Regrowth.” 2013 Symposium on VLSI Technology, Jan. 2013, pp. T246–47. EBSCOhost, widgets.ebscohost.com/prod/customlink/proxify/proxify.php?count=1&encode=0&proxy=&find_1=&replace_1=&target=https://search.ebscohost.com/login.aspx?direct=true&site=eds-live&scope=site&db=edb&AN=90162967&authtype=sso&custid=ns315887.

APA

Lee, S., Huang, C.-Y., Carter, A. D., Elias, D. C., Law, J. J. M., Chobpattana, V., Kramer, S., Thibeault, B. J., Mitchell, W., Stemmer, S., Gossard, A. C., & Rodwell, M. J. W. (2013). Record extrinsic transconductance (2.45 mS/µm at VDS = 0.5 V) InAs/In0.53Ga0.47As channel MOSFETs using MOCVD source-drain regrowth. 2013 Symposium on VLSI Technology, T246–T247.

Chicago

Lee, S., C.-Y. Huang, A. D. Carter, D. C. Elias, J. J. M. Law, V. Chobpattana, S. Kramer, et al. 2013. “Record Extrinsic Transconductance (2.45 MS/Μm at VDS = 0.5 V) InAs/In0.53Ga0.47As Channel MOSFETs Using MOCVD Source-Drain Regrowth.” 2013 Symposium on VLSI Technology, January, T246–47. http://widgets.ebscohost.com/prod/customlink/proxify/proxify.php?count=1&encode=0&proxy=&find_1=&replace_1=&target=https://search.ebscohost.com/login.aspx?direct=true&site=eds-live&scope=site&db=edb&AN=90162967&authtype=sso&custid=ns315887.