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Evaluation of the surface bonding energy of an InP membrane bonded oxide-free to Si using instrumented nanoindentation.
- Source :
- Applied Physics Letters; 8/19/2013, Vol. 103 Issue 8, p081901, 4p, 1 Color Photograph, 3 Black and White Photographs, 1 Diagram, 1 Chart, 1 Graph
- Publication Year :
- 2013
-
Abstract
- Instrumented nanoindentation is used in conjunction with scanning transmission electron microscopy to evaluate the mechanical resistance at the bonding interface of a 450 nm thick InP membrane bonded oxide-free to Si. Indentation using a Berkovich tip is shown to cause the planes in InP to rotate by as much as 16°. The shear stress resulting from this rotation causes the InP membrane to buckle, forming a debonded blister around the indented zone. The geometry of this blister is used to compute the surface bond energy of InP bonded oxide-free to Si. An average surface bonding energy of 585 mJ m-2 is reported. [ABSTRACT FROM AUTHOR]
Details
- Language :
- English
- ISSN :
- 00036951
- Volume :
- 103
- Issue :
- 8
- Database :
- Complementary Index
- Journal :
- Applied Physics Letters
- Publication Type :
- Academic Journal
- Accession number :
- 89942100
- Full Text :
- https://doi.org/10.1063/1.4817675