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A Terahertz Detector Array in a SiGe HBT Technology.
- Source :
- IEEE Journal of Solid-State Circuits; Sep2013, Vol. 48 Issue 9, p2002-2010, 9p
- Publication Year :
- 2013
-
Abstract
- <?Pub Dtl?>This paper presents HBT terahertz power detectors implemented in an experimental 0.25-\mu\m SiGe process technology with a peak fT/f\max of 280/435 GHz. Based on the nonlinearity of the HBT base-emitter junction, the detector operates as a square-law down converter, mixing terahertz frequencies directly to dc. Fifteen detectors have been arranged in a 3 \times 5-pixel array with differential on-chip ring antennas. The array has been assembled with a hyper-hemispherical silicon lens. Referred to the collecting aperture of the lens, a maximum optical current responsivity RI of 1 A/W and a minimum noise equivalent power (NEP) of about 50 \pW/\sqrtHz have been measured at 0.7 THz with a 125-kHz chopping frequency. The detectors have been characterized from 0.65 to 1 THz. [ABSTRACT FROM PUBLISHER]
Details
- Language :
- English
- ISSN :
- 00189200
- Volume :
- 48
- Issue :
- 9
- Database :
- Complementary Index
- Journal :
- IEEE Journal of Solid-State Circuits
- Publication Type :
- Academic Journal
- Accession number :
- 89927491
- Full Text :
- https://doi.org/10.1109/JSSC.2013.2265493