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A Terahertz Detector Array in a SiGe HBT Technology.

Authors :
Al Hadi, Richard
Grzyb, Janusz
Heinemann, Bernd
Pfeiffer, Ullrich R.
Source :
IEEE Journal of Solid-State Circuits; Sep2013, Vol. 48 Issue 9, p2002-2010, 9p
Publication Year :
2013

Abstract

<?Pub Dtl?>This paper presents HBT terahertz power detectors implemented in an experimental 0.25-\mu\m SiGe process technology with a peak fT/f\max of 280/435 GHz. Based on the nonlinearity of the HBT base-emitter junction, the detector operates as a square-law down converter, mixing terahertz frequencies directly to dc. Fifteen detectors have been arranged in a 3 \times 5-pixel array with differential on-chip ring antennas. The array has been assembled with a hyper-hemispherical silicon lens. Referred to the collecting aperture of the lens, a maximum optical current responsivity RI of 1 A/W and a minimum noise equivalent power (NEP) of about 50 \pW/\sqrtHz have been measured at 0.7 THz with a 125-kHz chopping frequency. The detectors have been characterized from 0.65 to 1 THz. [ABSTRACT FROM PUBLISHER]

Details

Language :
English
ISSN :
00189200
Volume :
48
Issue :
9
Database :
Complementary Index
Journal :
IEEE Journal of Solid-State Circuits
Publication Type :
Academic Journal
Accession number :
89927491
Full Text :
https://doi.org/10.1109/JSSC.2013.2265493