A Unified Physical-Based Model of Series Resistance of Polycrystalline Silicon Thin-Film Transistors With Explicit Analytical Solutions.

A physical-based analytical series resistance (Rs) model is first proposed to accurately evaluate the Rs of polycrystalline silicon thin-film transistors (TFTs). Through carefully analyzing the gate-to-source/drain overlap regions, three underlying physical effects wherein are adequately included, namely the gate (Vg)-induced carrier accumulation, current path spreading, and carrier transport via thermionic emission over grain boundaries. The proposed model can precisely reproduce the Vg dependent Rs behavior and fit the experimental data of both metal-induced lateral crystallized and excimer laser annealed TFTs. Furthermore, an explicit analytical expression of Rs is derived using appropriate approximation, based on which all underlying Rs components and their dependencies on device parameters can be clarified. Finally, feasible approaches of Rs reduction are suggested. [ABSTRACT FROM AUTHOR]