Total Ionizing Dose Effects on Data Retention Capabilities of Battery-Backed CMOS SRAM.

Authors :: Nair, Dhanya
Gale, Richard
Karp, Tanja
Source :: IEEE Transactions on Nuclear Science; 7/1/2013 Part 2, Vol. 60 Issue 4, p2611-2616, 6p
Publication Year :: 2013
Abstract: Data retention capabilities of commercial battery-backed static random access memories (SRAMs) exposed to different ionizing dose are investigated. Pattern imprinting is observed for devices exposed to a total dose of 50 kR and above. Room temperature annealing and recovery is also recorded. A model for the pattern imprinting behavior in SRAMs is presented based on the general understanding of defects produced in MOSFETs due to ionizing radiation. [ABSTRACT FROM PUBLISHER]

Subjects :: RECORDS management
STATIC random access memory
IONIZING radiation dosage
ANNEALING of semiconductors
METAL oxide semiconductor field-effect transistors

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