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P.19: Density-of-States Based Device-Circuit Co-Design Platform for Solution-Processed Organic Integrated Circuits.

Authors :
Jang, Jaeman
Kim, Jaehyeong
Lee, Jaewook
Jo, Chunhyung
Jun, Sungwoo
Kim, Hyeongjung
Choi, Sunwoong
Kim, Dong Myong
Lee, Jiyoul
Koo, Bonwon
Chung, Jong Won
Kim, Dae Hwan
Source :
SID Symposium Digest of Technical Papers; Jun2013, Vol. 44 Issue 1, p1051-1054, 4p
Publication Year :
2013

Abstract

In this work, we propose the subgap density-of-states (DOS) based device-circuit co-design platform for solution-processed organic integrated circuits. For the circuit simulation, analytical I-V and C-V model were established from experimentally extracted DOS parameters, incorporated into HSPICE via Verilog-A, and verified by comparing the simulation result with the measured characteristics of inverter integrated with solution-processed polymer-based organic thin-film-transistors. Furthermore, as the case study, it was shown by using our well-calibrated simulation platform that the pass-transistor type logic was potentially promising in low-power and high-speed solution processed organic integrated circuits. [ABSTRACT FROM AUTHOR]

Details

Language :
English
ISSN :
0097966X
Volume :
44
Issue :
1
Database :
Complementary Index
Journal :
SID Symposium Digest of Technical Papers
Publication Type :
Academic Journal
Accession number :
88939072
Full Text :
https://doi.org/10.1002/j.2168-0159.2013.tb06404.x