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Improved carrier injection and efficiency droop in InGaN/GaN light-emitting diodes with step-stage multiple-quantum-well structure and hole-blocking barriers.
- Source :
- Applied Physics Letters; 6/17/2013, Vol. 102 Issue 24, p241108, 4p, 1 Black and White Photograph, 3 Graphs
- Publication Year :
- 2013
-
Abstract
- Hole transport control and carrier injection improvement have been demonstrated in the InGaN/GaN light-emitting diodes (LEDs) with step-stage multiple-quantum-well (MQW) structure and Si-doped hole-blocking barriers. Single-wavelength emission was obtained under electrical pumping in these LEDs by utilizing hole-blocking effect. The light emission around 450 nm showed a substantial increase compared with the reference sample with single or step-stage indium-content MQWs. The droop behavior and wavelength stability were also improved significantly. These improvements were attributed to the enhanced carrier injection to the active region due to the alleviation of the quantum-confined Stark effect and the effective hole-blocking effect of the Si-doped barriers. [ABSTRACT FROM AUTHOR]
- Subjects :
- LIGHT emitting diodes
QUANTUM wells
INDIUM
STARK effect
ELECTRIC pumps
Subjects
Details
- Language :
- English
- ISSN :
- 00036951
- Volume :
- 102
- Issue :
- 24
- Database :
- Complementary Index
- Journal :
- Applied Physics Letters
- Publication Type :
- Academic Journal
- Accession number :
- 88345276
- Full Text :
- https://doi.org/10.1063/1.4811735