Impact of the crystallization of the high-k dielectric gate oxide on the positive bias temperature instability of the n-channel metal-oxide-semiconductor field emission transistor.

MLA

Lim, Han Jin, et al. “Impact of the Crystallization of the High-k Dielectric Gate Oxide on the Positive Bias Temperature Instability of the n-Channel Metal-Oxide-Semiconductor Field Emission Transistor.” Applied Physics Letters, vol. 102, no. 23, June 2013, p. 232909. EBSCOhost, https://doi.org/10.1063/1.4811274.

APA

Lim, H. J., Kim, Y., Sang Jeon, I., Yeo, J., Im, B., Hong, S., Kim, B.-H., Nam, S.-W., Kang, H., & Jung, E. S. (2013). Impact of the crystallization of the high-k dielectric gate oxide on the positive bias temperature instability of the n-channel metal-oxide-semiconductor field emission transistor. Applied Physics Letters, 102(23), 232909. https://doi.org/10.1063/1.4811274

Chicago

Lim, Han Jin, Youngkuk Kim, In Sang Jeon, Jaehyun Yeo, Badro Im, Soojin Hong, Bong-Hyun Kim, Seok-Woo Nam, Ho-kyu Kang, and E. S. Jung. 2013. “Impact of the Crystallization of the High-k Dielectric Gate Oxide on the Positive Bias Temperature Instability of the n-Channel Metal-Oxide-Semiconductor Field Emission Transistor.” Applied Physics Letters 102 (23): 232909. doi:10.1063/1.4811274.