III-V Quantum Dots in Dielectrics Made by Ion Implantation and Flash Lamp Annealing.

Difierent semiconductor nanocrystals synthesized in dielectrics on silicon are very interesting for applications in non-volatile memories and photovoltaics. In this paper we present an overview of microstructural and opto-electronic properties of different III-V quantum dots embedded in SiO₂ and Si₃N₄ made by sequential ion implantation and millisecond range fiash lamp annealing. It is shown that within 20 ms post-implantation annealing high quality crystalline III-V quantum dots can be formed in different matrices. Formation of crystalline III-V quantum dots was confirmed by cross-section transmission electron microscopy, photoluminescence and μ-Raman spectroscopy. Flash lamp annealing is essentially a single-fiash-single-wafer technique whose main attributes are the ease and control of processing over large wafer batches. [ABSTRACT FROM AUTHOR]