Cite
Design and Characterization of AlGaInAs/InP Buried Heterostructure Transistor Lasers Emitting at 1.3-μm Wavelength.
MLA
Sato, Noriaki, et al. “Design and Characterization of AlGaInAs/InP Buried Heterostructure Transistor Lasers Emitting at 1.3-Μm Wavelength.” IEEE Journal of Selected Topics in Quantum Electronics, vol. 19, no. 4, July 2013, p. 1502608. EBSCOhost, https://doi.org/10.1109/JSTQE.2013.2250490.
APA
Sato, N., Shirao, M., Sato, T., Yukinari, M., Nishiyama, N., Amemiya, T., & Arai, S. (2013). Design and Characterization of AlGaInAs/InP Buried Heterostructure Transistor Lasers Emitting at 1.3-μm Wavelength. IEEE Journal of Selected Topics in Quantum Electronics, 19(4), 1502608. https://doi.org/10.1109/JSTQE.2013.2250490
Chicago
Sato, Noriaki, Mizuki Shirao, Takashi Sato, Masashi Yukinari, Nobuhiko Nishiyama, Tomohiro Amemiya, and Shigehisa Arai. 2013. “Design and Characterization of AlGaInAs/InP Buried Heterostructure Transistor Lasers Emitting at 1.3-Μm Wavelength.” IEEE Journal of Selected Topics in Quantum Electronics 19 (4): 1502608. doi:10.1109/JSTQE.2013.2250490.