Effect of oxygen on the formation of end-of-range disorder in implantation amorphized silicon.

Details

Language :

English

ISSN :

08842914

Volume :

6

Issue :

8

Database :

Complementary Index

Journal :

Journal of Materials Research

Publication Type :

Academic Journal

Accession number :

87297502

Full Text :

https://doi.org/10.1557/JMR.1991.1695