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ETB-QW InAs MOSFET with scaled body for improved electrostatics.

Authors :
Kim, T.-W.
Kim, D.-H
Koh, D.-H.
Hill, R. J. W.
Lee, R. T. P.
Wong, M. H
Cunningham, T.
del Alamo, J. A.
Banerjee, S. K.
Oktyabrsky, S.
Greene, A.
Ohsawa, Y.
Trickett, Y.
Nakamura, G
Li, Q.
Lau, K. M.
Hobbs, C.
Kirsch, P. D.
Jammy, R.
Source :
2012 International Electron Devices Meeting; 2012, p3.4-32.3.4, 0p
Publication Year :
2012

Details

Language :
English
ISBNs :
9781467348720
Database :
Complementary Index
Journal :
2012 International Electron Devices Meeting
Publication Type :
Conference
Accession number :
87039683
Full Text :
https://doi.org/10.1109/IEDM.2012.6479151
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