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Nearly defect-free Ge gate-all-around FETs on Si substrates.
- Source :
- 2011 IEEE International Electron Devices Meeting (IEDM); 2011, p1.4-14, 0p
- Publication Year :
- 2011
Details
- Language :
- English
- ISBNs :
- 9781457705069
- Database :
- Complementary Index
- Journal :
- 2011 IEEE International Electron Devices Meeting (IEDM)
- Publication Type :
- Conference
- Accession number :
- 86947619
- Full Text :
- https://doi.org/10.1109/IEDM.2011.6131676