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10×10nm2 Hf/HfOx crossbar resistive RAM with excellent performance, reliability and low-energy operation.

Authors :
Govoreanu, B.
Kar, G.S.
Chen, Y-Y.
Paraschiv, V.
Kubicek, S.
Fantini, A.
Radu, I.P.
Goux, L.
Clima, S.
Degraeve, R.
Jossart, N.
Richard, O.
Vandeweyer, T.
Seo, K.
Hendrickx, P.
Pourtois, G.
Bender, H.
Altimime, L.
Wouters, D.J.
Kittl, J.A.
Source :
2011 IEEE International Electron Devices Meeting (IEDM); 2011, p1.4-14, 0p
Publication Year :
2011

Details

Language :
English
ISBNs :
9781457705069
Database :
Complementary Index
Journal :
2011 IEEE International Electron Devices Meeting (IEDM)
Publication Type :
Conference
Accession number :
86947595
Full Text :
https://doi.org/10.1109/IEDM.2011.6131652
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