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Reactive ion etching of vertical GaN mesas by the addition of CH4 to BCl3/H2/Ar inductively coupled plasma.
- Source :
- Semiconductor Science & Technology; 2001, Vol. 16 Issue 6, p471-473, 3p
- Publication Year :
- 2001
Details
- Language :
- English
- ISSN :
- 02681242
- Volume :
- 16
- Issue :
- 6
- Database :
- Complementary Index
- Journal :
- Semiconductor Science & Technology
- Publication Type :
- Academic Journal
- Accession number :
- 86908185
- Full Text :
- https://doi.org/10.1088/0268-1242/16/6/309