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InAs film grown on Si(111) by metal organic vapor phase epitaxy.
- Source :
- Journal of Physics: Conference Series; 2008, Vol. 100 Issue 1, p042017-042020, 4p
- Publication Year :
- 2008
Details
- Language :
- English
- ISSN :
- 17426588
- Volume :
- 100
- Issue :
- 1
- Database :
- Complementary Index
- Journal :
- Journal of Physics: Conference Series
- Publication Type :
- Academic Journal
- Accession number :
- 86900634
- Full Text :
- https://doi.org/10.1088/1742-6596/100/4/042017