Optimum designs for InGaAsP/InP (λ = 1.3μm) planoconvex waveguide lasers under lasing conditions.

MLA

Ueno, M., et al. “Optimum Designs for InGaAsP/InP (λ = 1.3μm) Planoconvex Waveguide Lasers under Lasing Conditions.” IEE Proceedings: Part I: Solid-State & Electron Devices, vol. 129, no. 6, Dec. 1982, pp. 218–28. EBSCOhost, https://doi.org/10.1049/ip-i-1.1982.0050.

APA

Ueno, M., Lang, R., Matsumoto, S., Kawano, H., Furuse, T., & Sakuma, I. (1982). Optimum designs for InGaAsP/InP (λ = 1.3μm) planoconvex waveguide lasers under lasing conditions. IEE Proceedings: Part I: Solid-State & Electron Devices, 129(6), 218–228. https://doi.org/10.1049/ip-i-1.1982.0050

Chicago

Ueno, M., R. Lang, S. Matsumoto, H. Kawano, T. Furuse, and I. Sakuma. 1982. “Optimum Designs for InGaAsP/InP (λ = 1.3μm) Planoconvex Waveguide Lasers under Lasing Conditions.” IEE Proceedings: Part I: Solid-State & Electron Devices 129 (6): 218–28. doi:10.1049/ip-i-1.1982.0050.