Low temperature growth and reliability of ferroelectric memory cell integrated on Si with conducting barrier stack.

Details

Language :

English

ISSN :

08842914

Volume :

12

Issue :

6

Database :

Complementary Index

Journal :

Journal of Materials Research

Publication Type :

Academic Journal

Accession number :

86811621

Full Text :

https://doi.org/10.1557/JMR.1997.0218