0.6-eV bandgap In0.69Ga0.31As thermophotovoltaic devices with compositionally undulating step-graded InAsyP1-ybuffers.

MLA

Ji Lian, et al. “0.6-EV Bandgap In0.69Ga0.31As Thermophotovoltaic Devices with Compositionally Undulating Step-Graded InAsyP1-Ybuffers.” Chinese Physics B, vol. 22, no. 2, Feb. 2013, pp. 026802-1-026802-4. EBSCOhost, https://doi.org/10.1088/1674-1056/22/2/026802.

APA

Ji Lian, Lu Shu-Long, Jiang De-Sheng, Zhao Yong-Ming, Tan Ming, Zhu Ya-Qi, & Dong Jian-Rong. (2013). 0.6-eV bandgap In0.69Ga0.31As thermophotovoltaic devices with compositionally undulating step-graded InAsyP1-ybuffers. Chinese Physics B, 22(2), 026802-1-026802-4. https://doi.org/10.1088/1674-1056/22/2/026802

Chicago

Ji Lian, Lu Shu-Long, Jiang De-Sheng, Zhao Yong-Ming, Tan Ming, Zhu Ya-Qi, and Dong Jian-Rong. 2013. “0.6-EV Bandgap In0.69Ga0.31As Thermophotovoltaic Devices with Compositionally Undulating Step-Graded InAsyP1-Ybuffers.” Chinese Physics B 22 (2): 026802-1-026802-4. doi:10.1088/1674-1056/22/2/026802.