Cite
High performance InAlN/GaN heterostructure and field effect transistor on sapphire substrate by MOCVD.
MLA
Fang, Y. L., et al. “High Performance InAlN/GaN Heterostructure and Field Effect Transistor on Sapphire Substrate by MOCVD.” Proceedings of 2012 5th Global Symposium on Millimeter-Waves, Jan. 2012, pp. 650–53. EBSCOhost, https://doi.org/10.1109/GSMM.2012.6313977.
APA
Fang, Y. L., Dun, S. B., Liu, B., Yin, J. Y., Sheng, B. C., Han, T. T., He, Z. Z., Xing, D., Cai, S. J., & Feng, Z. H. (2012). High performance InAlN/GaN heterostructure and field effect transistor on sapphire substrate by MOCVD. Proceedings of 2012 5th Global Symposium on Millimeter-Waves, 650–653. https://doi.org/10.1109/GSMM.2012.6313977
Chicago
Fang, Y. L., S. B. Dun, B. Liu, J. Y. Yin, B. C. Sheng, T. T. Han, Z. Z. He, D. Xing, S. J. Cai, and Z. H. Feng. 2012. “High Performance InAlN/GaN Heterostructure and Field Effect Transistor on Sapphire Substrate by MOCVD.” Proceedings of 2012 5th Global Symposium on Millimeter-Waves, January, 650–53. doi:10.1109/GSMM.2012.6313977.