High Performance FDSOI MOSFETs and TFETs Using SiGe Channels and Raised Source and Drain.

We review the current status on DualChannel CMOS based on compressively strained SiGe channels for p-type and Si channels n-type MOSFETs: from the integration on fully depleted SOI wafers to the electrical performance (threshold voltage shift, low access resistance, large carrier mobility values...). Moreover SiGe layers are beneficial for tunnel FETs, specially for improving the ON current densities and the subthrehold slope. [ABSTRACT FROM PUBLISHER]