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Vacuum field emission integrated differential amplifier.

Authors :
Hsu, S. H.
Kang, W. P.
Raina, S.
Davidson, J. L.
Huang, J. H.
Kerns, D. V.
Source :
25th International Vacuum Nanoelectronics Conference; 1/ 1/2012, p1-2, 2p
Publication Year :
2012

Abstract

This paper reports the development of an integrated vacuum field emission transistor differential amplifier (diff-amp) utilizing nanodiamond emitters. The device was fabricated by a dual-mask self-aligned mold transfer technique using standard silicon microfabrication technique in conjunction with chemical vapor deposited nanodiamond. The emission current of the transistor pair was validated by the Fowler-Nordheim equation. Well-matched field emission transistor characteristics and large common-mode rejection ratio of 55 dB were obtained, suggesting the capability of the device to reject common-mode noises and to amplify the information contained in differential signals. [ABSTRACT FROM PUBLISHER]

Details

Language :
English
ISBNs :
9781467319836
Database :
Complementary Index
Journal :
25th International Vacuum Nanoelectronics Conference
Publication Type :
Conference
Accession number :
86599830
Full Text :
https://doi.org/10.1109/IVNC.2012.6316927