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Adaptive multi-pulse program scheme based on tunneling speed classification for next generation multi-bit/cell NAND FLASH.

Authors :
Cho, Yong Sung
Park, Il Han
Yoon, Sang Young
Lee, Nam Hee
Joo, Sang Hyun
Song, Ki-Whan
Choi, Kihwan
Han, Jin Man
Kyung, Kye Hyun
Jun, Young-Hyun
Source :
2012 Symposium on VLSI Circuits (VLSIC); 1/ 1/2012, p136-137, 2p
Publication Year :
2012

Abstract

Adaptive multi-pulse program scheme is proposed and evaluated in 21nm 3-bit/cell NAND flash devices. This scheme will be a promising solution to overcome performance degradation of program time accompanied with process technology scaling. [ABSTRACT FROM PUBLISHER]

Details

Language :
English
ISBNs :
9781467308489
Database :
Complementary Index
Journal :
2012 Symposium on VLSI Circuits (VLSIC)
Publication Type :
Conference
Accession number :
86594904
Full Text :
https://doi.org/10.1109/VLSIC.2012.6243827