Effects of spontaneous and piezoelectric polarization on AlInN/GaN heterostructure.

In this work AlxIn1−xN/GaN heterostructure is considered taking into account the effects of spontaneous and piezoelectric polarizations on sheet carrier concentration versus alloy composition. It is found that piezoelectric polarization decreases from (14.8×10−6 C/cm2) to (−5.25×l0−6 C/cm2). Lattice matching appears for alloy composition between x = 0.81 and x = 0.82 when the piezoelectric polarization vanishes. The induced polarization varies from (−14×l0−6 C/cm2) to (10.85×l0−6 C/cm2). The calculated sheet carrier concentration is 6.3×l012, 1.73, 2.88 and 4.08×l013cm−2 for alloy compositions x = 0.75, 0.80, 0.85 and 0.90 respectively. Also barrier thickness on sheet carrier concentration is studied. [ABSTRACT FROM PUBLISHER]