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Electron trapping in Al2O3/HfO2 nanolaminate-based MOS capacitors.

Authors :
Salomone, L. Sambuco
Campabadal, F.
Fernandez, M. I.
Lipovetzky, J.
Carbonetto, S. H.
Inza, M. A. Garcia
Redin, E. G.
Faigon, A.
Source :
2012 Argentine School of Micro-Nanoelectronics, Technology & Applications (EAMTA); 1/ 1/2012, p90-95, 6p
Publication Year :
2012

Abstract

We studied the trapping/detrapping processes in MOS capacitors with an Atomic Layer Deposited (ALD) Al2O3/HfO2/Al2O3/HfO2/Al2O3 stack as insulating layer for both types of substrates, regarding its use as a component of Charge-Trapping nonvolatile memory (CT-NVM). Relevant information about trapping/detrapping processes was obtained through constant capacitance voltage transient (CCVT) technique. [ABSTRACT FROM PUBLISHER]

Details

Language :
English
ISBNs :
9781467326964
Database :
Complementary Index
Journal :
2012 Argentine School of Micro-Nanoelectronics, Technology & Applications (EAMTA)
Publication Type :
Conference
Accession number :
86525173