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Electron trapping in Al2O3/HfO2 nanolaminate-based MOS capacitors.
- Source :
- 2012 Argentine School of Micro-Nanoelectronics, Technology & Applications (EAMTA); 1/ 1/2012, p90-95, 6p
- Publication Year :
- 2012
-
Abstract
- We studied the trapping/detrapping processes in MOS capacitors with an Atomic Layer Deposited (ALD) Al2O3/HfO2/Al2O3/HfO2/Al2O3 stack as insulating layer for both types of substrates, regarding its use as a component of Charge-Trapping nonvolatile memory (CT-NVM). Relevant information about trapping/detrapping processes was obtained through constant capacitance voltage transient (CCVT) technique. [ABSTRACT FROM PUBLISHER]
Details
- Language :
- English
- ISBNs :
- 9781467326964
- Database :
- Complementary Index
- Journal :
- 2012 Argentine School of Micro-Nanoelectronics, Technology & Applications (EAMTA)
- Publication Type :
- Conference
- Accession number :
- 86525173