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Integrated Anti-Short-Circuit Safety Circuit in CMOS SOI for Normally-On JFET.

Authors :
Falahi, Khalil El
Dubois, Fabien
Bergogne, Dominique
Risaletto, Damien
Allard, Bruno
Source :
2012 7th International Conference on Integrated Power Electronics Systems (CIPS); 1/ 1/2012, p1-5, 5p
Publication Year :
2012

Abstract

The SiC JFET is a commercially available device either as a normally-on or a normally-off configuration. The latter cascode configuration incorporates a Si MOSFET that prevents the usage of the device in harsh environment, i.e. ambient temperature greater than 200deg C. Besides the acceptance of the normally-on native device is linked to an industrial and validated solution to avoid the inherent short-circuit when operated in an inverter leg. The short-circuit appears when the inverter is powered-on and the SiC JFET drivers are not in a position to apply an off-state condition to the power switches. There is then a need for a safety circuit that provides the off-state condition to the power switches in the shortest period of time. Such a safety circuit is detailed and fabricated as an integrated circuit in SOI CMOS technology. [ABSTRACT FROM PUBLISHER]

Details

Language :
English
ISBNs :
9783800734146
Database :
Complementary Index
Journal :
2012 7th International Conference on Integrated Power Electronics Systems (CIPS)
Publication Type :
Conference
Accession number :
86516065