The study of forward and reverse schottky junction for dual magnetodiode.

Authors :: Phetchakul, T.
Luanatikomkul, W.
Yamwong, W.
Poyai, A.
Source :: 2012 7th IEEE International Conference on Nano/Micro Engineered & Molecular Systems (NEMS); 1/ 1/2012, p599-602, 4p
Publication Year :: 2012
Abstract: This paper presents schottky diode for sensing magnetic field. The structure is the same as dual magnetodiode that had been reported by the same group. The device can operate both in forward and reverse biasing for magnetic field device. The sensitivity (ΔVo/ΔB) by simulation of forward bias is 0.8 mV/T at the current 1.93 µA and reverse bias is 6 nV/T at the current 13.49 pA . Two modes of operation show linearity which electron is the only type of carrier. The mechanism of forward and reverse modes of operation are described. [ABSTRACT FROM PUBLISHER]

Language :: English
ISBNs :: 9781467311229
Database :: Complementary Index
Journal :: 2012 7th IEEE International Conference on Nano/Micro Engineered & Molecular Systems (NEMS)
Publication Type :: Conference
Accession number :: 86515676
Full Text :: https://doi.org/10.1109/NEMS.2012.6196847