Small-signal time-domain physical/electrical fet modeling approach.

Authors :: Abdeslam, N.A.
Asadi, S.
Sengouga, N.
Yagoub, M.C.E.
Source :: 2012 25th IEEE Canadian Conference on Electrical & Computer Engineering (CCECE); 1/ 1/2012, p1-4, 4p
Publication Year :: 2012
Abstract: In this paper, a reliable small-signal time-domain FET modeling approach is proposed. Based on physical/electrical parameters, the proposed model can efficiently characterize high-frequency transistors. [ABSTRACT FROM PUBLISHER]

Language :: English
ISBNs :: 9781467314312
Database :: Complementary Index
Journal :: 2012 25th IEEE Canadian Conference on Electrical & Computer Engineering (CCECE)
Publication Type :: Conference
Accession number :: 86504282
Full Text :: https://doi.org/10.1109/CCECE.2012.6334980