Switching controllability of high voltage GaN-HEMTs and the cascode connection.

This paper reports that the switching controllability of high-voltage GaN-HEMTs and the cascode connection depends on the feedback capacitance design. The switching behavior of the GaN-HEMT can be controlled by the external gate resistance as the same manner as the conventional Si-MOSFETs. The switching controllability was improved by the substrate connection due to the parasitic capacitance change. The controllability of the cascode connection was slightly worse compared with the Si-MOSFET, because the effective feedback capacitance became small by the step by step switching operation. [ABSTRACT FROM PUBLISHER]