Dependence of transfer characteristic of amorphous oxide semiconductor thin-film transistors on the channel thickness evaluated by device simulation.

Enhancement of subthreshold swing with increasing the channel layer thickness of bottom gate top contact type amorphous oxide TFT were evaluated by 2D device simulation with trap states induced in backchannel. The distance between the channel and the trap states induced in backchannel would be the main reason for the enhancement of the subthreshold swing. This effect is similar to one of the oxide TFTs. [ABSTRACT FROM PUBLISHER]