Modifications of growth of strained silicon and dopant activation in silicon by cryogenic ion implantation and recrystallization annealing.

MLA

Itokawa, Hiroshi, et al. “Modifications of Growth of Strained Silicon and Dopant Activation in Silicon by Cryogenic Ion Implantation and Recrystallization Annealing.” 2012 12th International Workshop on Junction Technology, Jan. 2012, pp. 210–15. EBSCOhost, https://doi.org/10.1109/IWJT.2012.6212843.

APA

Itokawa, H., Berliner, N. C., Teehan, S., Wall, D. R., Wahl, J. A., Kim, E., Li, J., Demarest, J. J., Ronsheim, P., & Paruchuri, V. (2012). Modifications of growth of strained silicon and dopant activation in silicon by cryogenic ion implantation and recrystallization annealing. 2012 12th International Workshop on Junction Technology, 210–215. https://doi.org/10.1109/IWJT.2012.6212843

Chicago

Itokawa, Hiroshi, Nathaniel C. Berliner, Sean Teehan, Donald R. Wall, Jeremy A. Wahl, Eunha Kim, Juntao Li, James J. Demarest, Paul Ronsheim, and Vamsi Paruchuri. 2012. “Modifications of Growth of Strained Silicon and Dopant Activation in Silicon by Cryogenic Ion Implantation and Recrystallization Annealing.” 2012 12th International Workshop on Junction Technology, January, 210–15. doi:10.1109/IWJT.2012.6212843.