I–V model for short gate length ion-implanted GaAs OPFETs.

Authors :: Tripathi, Shweta
Jit, S.
Source :: 2011 International Conference on Multimedia, Signal Processing & Communication Technologies; 1/ 1/2011, p80-82, 3p
Publication Year :: 2011
Abstract: The current-voltage characteristics for optically controlled short gate-length ion-implanted GaAs MESFET has been presented in this paper. The illumination sensitivity of the drain-source current has been analyzed. It is shown that good agreements are obtained between the developed model and the numerical simulation data obtained by ATLAS™ two-dimensional (2D) device simulator. [ABSTRACT FROM PUBLISHER]

Language :: English
ISBNs :: 9781457711053
Database :: Complementary Index
Journal :: 2011 International Conference on Multimedia, Signal Processing & Communication Technologies
Publication Type :: Conference
Accession number :: 86486692
Full Text :: https://doi.org/10.1109/MSPCT.2011.6150441