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GaAs p-i-n diodes for room temperature soft X-ray photon counting.
- Source :
- 2011 IEEE Nuclear Science Symposium Conference Record; 1/ 1/2011, p4809-4811, 3p
- Publication Year :
- 2011
-
Abstract
- A study of leakage currents and X-ray photon counting using GaAs p-i-n diodes is presented. Different fabrication techniques have been investigated, namely He implantation, partial wet etching and full wet etching. It was found that the partially etched diodes showed well-defined spectral peaks when exposed to a 55Fe radioisotope source and uniformly low leakage currents ideal for X-ray detector arrays. [ABSTRACT FROM PUBLISHER]
Details
- Language :
- English
- ISBNs :
- 9781467301183
- Database :
- Complementary Index
- Journal :
- 2011 IEEE Nuclear Science Symposium Conference Record
- Publication Type :
- Conference
- Accession number :
- 86485062
- Full Text :
- https://doi.org/10.1109/NSSMIC.2011.6154719