Characterization of Single-Event Transients Of Body-Tied vs. floating-body circuits in 150 nm 3D SOI.

Floating-body and body-tied inverter circuits were implemented in MIT Lincoln-Lab's 3-dimensional SOI 150 nm process to characterize the technology for single-event effects. The circuits were tested with heavy-ions and single-event transients were measured for body-tied and floating-body inverters across all tiers. These experimental results show that for floating-body and body-tied circuits that the 3D SOI process exhibits the same SET trends as a 1D SOI process. [ABSTRACT FROM PUBLISHER]