Temperature effects on power MOSFET and IGBT sensitivities toward single events.

Authors :: Morand, S.
Miller, F.
Austin, P.
Poirot, P.
Gaillard, R.
Carriere, T.
Buard, N.
Source :: 2011 12th European Conference on Radiation & Its Effects on Components & Systems; 1/ 1/2011, p109-114, 6p
Publication Year :: 2011
Abstract: Proton accelerator and pulsed laser tests show that temperature induces large variations compared to room temperature for power electronic radiation sensitivity assessment. [ABSTRACT FROM PUBLISHER]

Language :: English
ISBNs :: 9781457705854
Database :: Complementary Index
Journal :: 2011 12th European Conference on Radiation & Its Effects on Components & Systems
Publication Type :: Conference
Accession number :: 86473464
Full Text :: https://doi.org/10.1109/RADECS.2011.6131378

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