Magnetism and transport properties of α-Mn structure Mn3Ge thin film.

We have newly synthesized the α-Mn structured Mn3Ge thin films on GaAs(001) substrate. The single phase Mn3Ge film was grown at a growth temperature of 150 °C, while the secondary phase was observed above a growth temperature of 250 °C. The Mn3Ge films exhibited ferrimagnetism with a Curie temperature of 334 K. The saturation magnetizations were 255.9 and 313.8 emu/cm3 and the corresponding coercive fields were 453 and 1166 Oe at 10 K for the samples grown at 150 and 300 °C, respectively. The ferrimagnetism was confirmed by the anomalous Hall effect data. [ABSTRACT FROM AUTHOR]