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Unintentional incorporation of H and related structural and free-electron properties of c- and a-plane InN.

Authors :
Darakchieva, V.
Lorenz, K.
Xie, M.-Y.
Alves, E.
Schaff, W. J.
Yamaguchi, T.
Nanishi, Y.
Ruffenach, S.
Moret, M.
Briot, O.
Source :
Physica Status Solidi. A: Applications & Materials Science; Jan2012, Vol. 209 Issue 1, p91-94, 4p
Publication Year :
2012

Details

Language :
English
ISSN :
18626300
Volume :
209
Issue :
1
Database :
Complementary Index
Journal :
Physica Status Solidi. A: Applications & Materials Science
Publication Type :
Academic Journal
Accession number :
86368413
Full Text :
https://doi.org/10.1002/pssa.201100175