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Comparison between tensile-strained AlGaInP SQW and MQW LDs emitting at 615 nm.
- Source :
- Electronics Letters (Institution of Engineering & Technology); 03/31/1994, Vol. 30 Issue 7, p566-568, 3p
- Publication Year :
- 1994
Details
- Language :
- English
- ISSN :
- 00135194
- Volume :
- 30
- Issue :
- 7
- Database :
- Complementary Index
- Journal :
- Electronics Letters (Institution of Engineering & Technology)
- Publication Type :
- Academic Journal
- Accession number :
- 86343693
- Full Text :
- https://doi.org/10.1049/el:19940413